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Advance Product Information
Jan 17, 2005
27 - 31 GHz 1W Power Amplifier
Key Features
* * * * * * * *
TGA4509-EPU
22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss Built-in Power Detector 0.25-m mmW pHEMT 3MI Bias Conditions: Vd = 4 - 6 V, Idq = 420 mA Chip Dimensions 2.44 mm x 1.15 mm x 0.1 mm (0.096 x 0.045 x 0.004 in)
Primary Applications
* * * * Point to Point Radio Point to Multi-point Radio LMDS Satellite Ground Terminal
Fixtured Measured Performance
30 25 20 15 10
S 21
Bias Conditions: Vd = 6 V, Id =420 mA
Sij (dB)
5 0 -5 -1 0 -1 5 -2 0 -2 5 -3 0 25
32 30 1000
S22 S 11
26
27
28
29
30
31
32
33
34
F re q u e n c y (G H z )
Pout (dBm) & Gain (dB)
28 26 24 22 20 18 16 14 12 10 -12 -9 -6 -3 0 3 6 9 12 15 18 21 0 800
600
Gain
400
IDS
200
Pin (dBm )
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
IDS (mA)
Data taken @ 30 GHz
Pout
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
Advance Product Information
Jan 17, 2005 TGA4509-EPU
TABLE I MAXIMUM RATINGS 1/ Symbol + V V |Ig| + I PD PIN TCH TM TSTG 1/ 2/ 3/ 4/ Parameter Positive Supply Voltage Negative Supply Voltage Range Gate Current Positive Supply Current Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temperature (30 seconds) Storage Temperature Value 7V -5 V to 0 V 35.2 mA 930 mA TBD 22 dBm 150 C 320 C -65 C to 150 C Notes
2/, 5/
3/, 4/
5/
These values represent the maximum operable values of this device Total current for the entire MMIC These ratings apply to each individual FET Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. The maximum supply current from one side is 650 mA. From both sides, the maximum supply current is 930 mA.
TABLE II ELECTRICAL CHARACTERISTICS (TA = 25oC, Nominal)
Parameter Drain Operating Voltage Quiescent Current Small Signal Gain @ 30 GHz Gain Flatness Input Return Loss (Linear Small Signal) Output Return Loss (Linear Small Signal) Reverse Isolation CW Output Power @ P1dB Power Added Efficiency @ P1dB P1dB temperature coeff. TC (-40 to +85 C) Units V mA dB dB/50MHz dB dB dB dBm % dB/deg C Typical 6 420 22 0.0660 -10 -10 -40 30 25 0.0135
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2
Advance Product Information
Jan 17, 2005 TGA4509-EPU
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Id = 420 mA
26 24 22 20
Gain (dB)
18 16 14 12 10 8 6 26 27 28 29 30 31 32 33 34
Frequency (GHz)
0
S11
Return Loss (dB)
-5 -10 -15 -20 -25 -30 25 26 27 28 29 30 31 32 33 34
S22
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
3
Advance Product Information
Jan 17, 2005 TGA4509-EPU
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Id = 420 mA
32
Psat
31
Power (dBm)
30
Pout @ P1dB (dBm)
29 28 27 26 27 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32 32.5 33 33.5
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
4
Advance Product Information
Jan 17, 2005 TGA4509-EPU
Recommended Assembly Diagram
Vg (optional)
0.01 PF
Vd
0.01 PF
Reference Diode
100pF
100pF
0.01PF DQ cap (opt.)
Input TFN
Output TFN
100pF
100pF 0.01 PF
Power Detector
0.01 PF
Vd (optional)
Vg
Notes: 1. Connection to power det, ref diode shown. 2. 1 F cap on gate & drain power supplies are lines required. 3. Gate voltage can either be from one side or both sides. 4. Drain voltage is required from both sides for Id > 650 mA.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
5
Advance Product Information
Jan 17, 2005 TGA4509-EPU
On-chip diode functions as envelope detector External coupler and DC bias required
TGA4509 measured detector voltage offset vs output power with 20dB coupler: Vb=0.8V, f = 30GHz, Coupler loss is uncalibrated, 10K load 10
Detector voltage (V)
1
0.1
0.01 8 10 12 14 16 18 20 22 24 26 28 30 32 Pout (dBm)
TGA4509
RF OUT
External coupler (-20dB)
Video out (Vdet)
C=2pF
50:
External DC bias 10K:
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
6
Advance Product Information
Jan 17, 2005 TGA4509-EPU
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
7
Advance Product Information
Jan 17, 2005 TGA4509-EPU
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
8

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